Electronic structure of amorphous InGaO3(ZnO)0.5 thin films

被引：28

作者：

Cho, Deok-Yong ^{[1
,2
]}

Song, Jaewon ^{[1
,2
]}

Hwang, Cheol Seong ^{[1
,2
]}

Choi, Woo Seok ^{[3
]}

Noh, T. W. ^{[3
]}

Kim, J. -Y. ^{[4
]}

Lee, H. -G. ^{[4
]}

Park, B. -G. ^{[5
]}

Cho, S. -Y.

Oh, S. -J.

Jeong, Jong Han ^{[6
]}

Jeong, Jae Kyeong ^{[7
]}

Mo, Yeon-Gon

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, ReCOE & FPRD, Seoul 151747, South Korea

[4] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea

[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[6] Samsung SDI Co LTD, Corp R&D Ctr, Yongin 449902, Gyeonggi Do, South Korea

[7] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 04期

关键词：

InGaZnO; Transparent conducting oxide; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; CARRIER TRANSPORT;

D O I：

10.1016/j.tsf.2009.01.156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of amorphous semiconductor InGaO3(ZnO)(0.5) thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1079 / 1081

页数：3

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