Reflectance spectroscopy on GaN films under uniaxial stress

被引：29

作者：

Yamaguchi, AA ^{[1
]}

Mochizuki, Y ^{[1
]}

Sasaoka, C ^{[1
]}

Kimura, A ^{[1
]}

Nido, M ^{[1
]}

Usui, A ^{[1
]}

机构：

[1] NEC CORP LTD, OPTOELECT RES LABS, TSUKUBA, IBARAKI 305, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 03期

关键词：

Band structure - Calculations - Electronic density of states - Excitons - Metallorganic chemical vapor deposition - Semiconducting gallium compounds - Semiconductor lasers - Spectroscopy - Strain - Stresses - X ray diffraction;

D O I：

10.1063/1.119541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The uniaxial stress effects on valence band structures in GaN are investigated by reflectance spectroscopy. It is observed that the energy separation between A and B valence bands increases with the application of uniaxial stress in the c plane. The experimental results are analyzed on the basis of the k.p theory, and deformation potential D-5 is determined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance. (C) 1997 American Institute of Physics.

引用

页码：374 / 376

页数：3

共 16 条

[1] HETEROEPITAXIAL GROWTH AND THE EFFECT OF STRAIN ON THE LUMINESCENT PROPERTIES OF GAN FILMS ON (1120) AND (0001) SAPPHIRE SUBSTRATES [J].

AMANO, H ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1384-L1386

[2]

Bir G.L., 1972, Symmetry and strain induced effects in semiconductors

[3] Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers [J].

Chichibu, S ;

Shikanai, A ;

Azuhata, T ;

Sota, T ;

Kuramata, A ;

Horino, K ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3766-3768

[4] Optical gain for wurtzite GaN with anisotropic strain in c plane [J].

Domen, K ;

Horino, K ;

Kuramata, A ;

Tanahashi, T .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :987-989

[5] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].

Gil, B ;

Briot, O ;

Aulombard, RL .

PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031

[6] FINE STRUCTURE IN THE OPTICAL ABSORPTION EDGE OF ANISOTROPIC CRYSTALS [J].

HOPFIELD, JJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :97-107

[7] OPTICAL GAIN CALCULATION OF WURTZITE GAN/ALGAN QUANTUM-WELL LASER [J].

KAMIYAMA, S ;

OHNAKA, K ;

SUZUKI, M ;

UENOYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A) :L821-L823

[8] Exciton region reflectance of homoepitaxial GaN layers [J].

Korona, KP ;

Wysmolek, A ;

Pakula, K ;

Stepniewski, R ;

Baranowski, JM ;

Grzegory, I ;

Lucznik, B ;

Wroblewski, M ;

Porowski, S .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :788-790

[9] Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :868-870

[10] HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001

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