Photoluminescence of GaN nanowires of different crystallographic orientations

被引：83

作者：

Chin, Alan H. ^{[1
]}

Ahn, Tai S.

Li, Hongwei

Vaddiraju, Sreeram

Bardeen, Christopher J.

Ning, Cun-Zheng

Sunkara, Mahendra K.

机构：

[1] NASA, Ames Res Ctr, Ctr Adv Aerosp Mat & Devices, Moffett Field, CA 94035 USA

[2] Univ Calif Riverside, Dept Chem, Riverside, CA 92521 USA

[3] Univ Louisville, Dept Chem Engn, Louisville, KY 40292 USA

来源：

NANO LETTERS | 2007年 / 7卷 / 03期

关键词：

D O I：

10.1021/nl062524o

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

引用

页码：626 / 631

页数：6

共 20 条

[1] Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders [J].

Bergman, L ;

Chen, XB ;

Morrison, JL ;

Huso, J ;

Purdy, AP .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :675-682

[2] Size-dependent oxygen-related electronic states in silicon nanocrystals [J].

Biteen, JS ;

Lewis, NS ;

Atwater, HA ;

Polman, A .

APPLIED PHYSICS LETTERS, 2004, 84 (26) :5389-5391

[3] Anomalous blueshift in emission spectra of ZnO nanorods with sizes beyond quantum confinement regime [J].

Chen, Chun-Wei ;

Chen, Kuei-Hsien ;

Shen, Ching-Hsing ;

Ganguly, Abhijit ;

Chen, Li-Chyong ;

Wu, Jih-Jen ;

Wen, Hui-I ;

Pong, Way-Faung .

APPLIED PHYSICS LETTERS, 2006, 88 (24)

[4] Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength [J].

Djurisic, AB ;

Leung, YH ;

Tam, KH ;

Ding, L ;

Ge, WK ;

Chen, HY ;

Gwo, S .

APPLIED PHYSICS LETTERS, 2006, 88 (10)

[5] GaN nanowire lasers with low lasing thresholds [J].

Gradecak, S ;

Qian, F ;

Li, Y ;

Park, HG ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3

[6] Semiconductor nanowire laser and nanowire waveguide electro-optic modulators [J].

Greytak, AB ;

Barrelet, CJ ;

Li, Y ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

[7] III-nitrides: Growth, characterization, and properties [J].

Jain, SC ;

Willander, M ;

Narayan, J ;

Van Overstraeten, R .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :965-1006

[8] Crystallographic alignment of high-density gallium nitride nanowire arrays [J].

Kuykendall, T ;

Pauzauskie, PJ ;

Zhang, YF ;

Goldberger, J ;

Sirbuly, D ;

Denlinger, J ;

Yang, PD .

NATURE MATERIALS, 2004, 3 (08) :524-528

[9] Direction-dependent homoepitaxial growth of GaN nanowires [J].

Li, HW ;

Chin, AH ;

Sunkara, MK .

ADVANCED MATERIALS, 2006, 18 (02) :216-+

[10] Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys [J].

Nam, KB ;

Nakarmi, ML ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

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