Microstructure and photoluminescence of electrochemically etched porous SiC

被引：49

作者：

Jessensky, O

Muller, F

Gosele, U

机构：

[1] Max-Planck Inst. Mikrostrukturphysik, 06120 Halle

来源：

THIN SOLID FILMS | 1997年 / 297卷 / 1-2期

关键词：

silicon carbide; scanning electron microscopy; time-dependent photoluminescence;

D O I：

10.1016/S0040-6090(96)09419-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous SiC was prepared from both n-type and p-type 6H-SiC wafers with and without u.v. illumination. Steady-state and time-resolved photoluminescence (PL) spectra were taken at room temperature. The morphology of the samples was investigated using scanning electron microscopy. In the PL spectra we observed several components with time constants ranging from the nanosecond- to the microsecond-regime, In general, an enhancement of the fast blue component as well as a blue-shift and broadening of the spectra are observed, whereas no luminescence was obtained above the crystal bandgap. The red band of the n-type substrate is reduced after anodization. The results are compared to other data and models proposed in the literature. (C) 1997 Elsevier Science S.A.

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页码：224 / 228

页数：5

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