Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

被引：197

作者：

Liu, Po-Tsun ^{[1
,2
]}

Chou, Yi-Teh ^{[1
,3
]}

Teng, Li-Feng ^{[1
,3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期

关键词：

II-VI semiconductors - Thin films - Passivation - Bias voltage - Indium compounds - Threshold voltage - Zinc oxide - Thin film circuits;

D O I：

10.1063/1.3272016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of bias stress on a passivation-free InZnO thin-film transistors (a-IZO TFTs) exposed to either the atmosphere or a vacuum. The magnitude of threshold voltage shift increased with the application duration of bias stress, to an extent that was much larger in the atmosphere than in the vacuum. The threshold voltage recovered slowly to its nearly initial value when the gate bias stress was removed. The electrical metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, and a dynamic equilibrium was finally achieved, regardless of the polarity of stress voltage. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3272016]

引用

收藏

页数：3

相关论文

共 13 条

[1] Improvement of hydrogenated amorphous-silicon TFT performances with low-k siloxane-based hydrogen silsesquioxane (HSQ) passivation layer [J].

Chang, Ta-Shan ;

Chang, Ting- Chang ;

Liu, Po-Tsun ;

Chang, Tien-Shan ;

Tu, Chun-Hao ;

Yeh, Feng-Sheng .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (11) :902-904

[2] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[3] Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs [J].

Hirao, Takashi ;

Furuta, Mamoru ;

Hiramatsu, Takahiro ;

Matsuda, Tokiyoshi ;

Li, Chaoyang ;

Furuta, Hiroshi ;

Hokari, Hitoshi ;

Yoshida, Motohiko ;

Ishii, Hiromitsu ;

Kakegawa, Masayuki .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :3136-3142

[4] Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes [J].

Hsieh, Hsing-Hung ;

Wu, Chung-Chih .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[5] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[6] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[7] Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity [J].

Lim, Wantae ;

Wang, Yu-Lin ;

Ren, F. ;

Norton, D. P. ;

Kravchenko, I. I. ;

Zavada, J. M. ;

Pearton, S. J. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (09) :H267-H269

[8] Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors [J].

Liu, Po-Tsun ;

Chou, Yi-Teh ;

Teng, Li-Feng .

APPLIED PHYSICS LETTERS, 2009, 94 (24)

[9] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[10] Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water [J].

Park, Jin-Seong ;

Jeong, Jae Kyeong ;

Chung, Hyun-Joong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 92 (07)