Transmission and scanning electron microscopy studies of single femtosecond-laser-pulse ablation of silicon

被引:88
作者
Borowiec, A [1 ]
Mackenzie, M [1 ]
Weatherly, GC [1 ]
Haugen, HK [1 ]
机构
[1] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 76卷 / 02期
关键词
D O I
10.1007/s003390201409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The final state of the material resulting from laser irradiation of silicon using 130 fs pulses at 790 nm was studied using a number of techniques including scanning and transmission electron microscopies, as well as atomic force microscopy. Structural details and the level of damage to the nearby solid following irradiation were characterized and are discussed in the context of recent dynamical studies.
引用
收藏
页码:201 / 207
页数:7
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