Angular dependences of surface composition, sputtering and ripple formation on silicon under N2+ ion bombardment

被引：22

作者：

Bachurin, VI ^{[1
]}

Lepshin, PA ^{[1
]}

Smirnov, VK ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect, Yaroslavl 150051, Russia

来源：

VACUUM | 2000年 / 56卷 / 04期

关键词：

D O I：

10.1016/S0042-207X(99)00194-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The correlation between angular dependences of surface composition and sputtering yield of Si by N-2(+) ions was found. It may explain anamalous (in comparison to Ar+ ion bombardment on Si) sharp increasing of sputtering yield at angles of ion incidence over 30 degrees. Angular range of ripple formation on Si surface bombarded by 1.5-9 keV N-2(+) ions was measured. It belongs to the interval of angles of ion incidence where heterogeneity of surface layers and pronounced changes of sputtering were observed. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：241 / 245

页数：5

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