Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations

Carrier profiles of multiple quantum wells are studied using self-consistent simulations. The free carrier density of the well is found to be distributed nonuniformly and symmetrically, although the doping level in barriers is uniform. The calculated apparent carrier density obtainable from the capacitance-voltage profile is found to be distributed asymmetrically. Simulation results show that, even if electrons are confined in quantum wells, the apparent electron distribution can be flattened if barrier thickness or doping level in barriers are reduced to such an extent that the Debye length is comparable to the barrier thickness. (C) 1997 American Institute of Physics.