Photoreflectance study of crystalline silicon

被引：8

作者：

Moriya, H ^{[1
]}

Kaneta, A ^{[1
]}

Adachi, S ^{[1
]}

机构：

[1] Gunma Univ, Fac Engn, Dept Elect Engn, Kiryu, Gumma 3768515, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 76卷 / 03期

关键词：

silicon; photoreflectance; modulation spectroscopy; critical point; band-gap energy; electroreflectance;

D O I：

10.1016/S0921-5107(00)00453-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoreflectance study has been performed to determine the E-0', E-1 and E-2 critical-point (CP) energies in crystalline silicon at temperatures T between 77 and 300 K using an Ar+-ion laser as the modulation light source. The measured photoreflectance spectra have been successfully explained by a standard CP line shape. The temperature dependence of the E-0', E-1 and E-2 CP parameters (band-gap energy, amplitude and broadening parameter) has been analyzed using the Varshni equation and an empirical expression of Bose-Einstein type. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：232 / 236

页数：5

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