1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes

被引：32

作者：

Gollub, D

Fischer, M

Kamp, M

Forchel, A

机构：

[1] Nanoplus Nanosyst & Technol GmbH, D-97218 Gerbrunn, Germany

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 23期

关键词：

D O I：

10.1063/1.1527238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInNAs/GaAs single-quantum-well lasers were grown by solid-source molecular-beam epitaxy using a radio-frequency source for nitrogen activation. Distributed feedback has been realized by a metal grating arranged laterally to the laser ridge. Single-mode emission between 1271 and 1304 nm could be demonstrated. Room-temperature continuous-wave operation has been obtained with a threshold current of 28 mA, an external efficiency of 0.16 W/A per facet, and a side-mode suppression ratio of 44 dB at 90 mA drive current. (C) 2002 American Institute of Physics.

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收藏

页码：4330 / 4331

页数：2

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