Effect of annealing on electrical, structural, and optical properties of sol-gel ITO thin films

被引：37

作者：

Hammad, Talaat Moussa ^{[1
]}

机构：

[1] Brigham Young Univ, Dept Chem & Biochem, Provo, UT 84602 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 09期

关键词：

INDIUM-TIN-OXIDE; SPUTTERED ITO; TRANSPARENT; PERFORMANCES;

D O I：

10.1002/pssa.200881781

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) thin films (In/Sn = 90: 10) prepared by the sol-gel dip-coating process on glass substrates, followed by annealing in air in the temperature range 150-550 degrees C were studied. Overall the films structure, surface roughness, and electrical performances are improved, leading to electrical resistivity fifth order of magnitude larger than before annealing and a more compact and crystalline films, translated by a preferential orientation in the (I I I) direction. Besides that, the films are highly transparent in the visible range, where it shows an average transmittance of 92.3% after annealing to 550 degrees C. The allowed direct band gap at temperature range 150-550 degrees C was estimated to be 3.32-4.21 eV, increasing as the annealing temperature also increases. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2128 / 2132

页数：5

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