Scanning transmission electron microscopy-energy dispersive X-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures

被引：8

作者：

Ishimaru, M ^{[1
]}

Dickerson, RM

Sickafus, KE

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8128581, Japan

[2] Univ Calif Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 05期

关键词：

D O I：

10.1149/1.1393470

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Elemental distributions and chemical bonding states of oxygen-ion-implanted SiC have been examined using scanning transmission electron microscopy (STEM) equipped with an energy dispersive X-ray spectrometer (EDX) and an electron energy loss spectrometer (EELS). 6H-SiC single crystals with [0001] orientation were implanted with 180 keV oxygen ions at 650 degrees C to fluences of 0.7 x 10(18) and 1.4 x 10(18) cm(2). STEM-EDX/EELS measurements show that the low-dose sample possesses a buried amorphous SiCxOy layer, and oxygen concentration peaks around the center of the buried amorphous layer. On the other hand, a well-defined SiO2 layer including sell-bonded carbon atoms is formed in the high-dose sample, and this amorphous region has a layered structure due to compositional variations of silicon, carbon, and oxygen. A slight chemical disordering induced by implantation is also confirmed to exist in topmost SiC layer. (C) 2000 The Electrochemical Society. S0013-4651(99)10-053-3. All rights reserved.

引用

页码：1979 / 1981

页数：3

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