Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires

被引：157

作者：

Shtrikman, Hadas ^{[1
]}

Popovitz-Biro, Ronit ^{[2
]}

Kretinin, Andrey ^{[1
]}

Houben, Lothar ^{[3
]}

Heiblum, Moty ^{[1
]}

Bukala, Malgorzata ^{[4
]}

Galicka, Marta ^{[4
]}

Buczko, Ryszard ^{[4
]}

Kacman, Perla ^{[4
]}

机构：

[1] Weizmann Inst Sci, Braun Ctr Submicron Res, IL-76100 Rehovot, Israel

[2] Weizmann Inst Sci, Electron Microscopy Unit, IL-76100 Rehovot, Israel

[3] Forschungszentrum Julich, Inst Solid State Res, D-52425 Julich, Germany

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

NANO LETTERS | 2009年 / 9卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY; GAAS NANOWIRES; GROWTH MECHANISMS; POLYTYPISM;

D O I：

10.1021/nl803524s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter (similar to 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.

引用

页码：1506 / 1510

页数：5

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