Crystal structure and electrical properties of epitaxial SrBi2Ta2O9 films

被引：40

作者：

Ishikawa, K

Funakubo, H

Saito, K

Suzuki, T

Nishi, Y

Fujimoto, M

机构：

[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Philips Analyt, Applicat Lab, Sagamihara, Kanagawa 2280803, Japan

[3] Taiyo Yuden R&D Ctr, Haruna, Gunma 3703347, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 11期

关键词：

D O I：

10.1063/1.373490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystal structure and electrical properties were investigated for (001)- and (116)-oriented SrBi2Ta2O9 (SBT) thin films deposited on (100) SrTiO3 and (100)SrRuO(3)parallel to(100)SrTiO3 substrates, and (110) SrTiO3 and (110)SrRuO(3)parallel to(110)SrTiO3 substrates, respectively. Both oriented SBT films were epitaxially grown with high crystal perfection, and twinning existed in the (116)-oriented one. Both oriented SBT films were found to form c/6 lattice displacements to relax the stress. The interface of the (001)-oriented film did not include misfit dislocations, defects, and an interfacial layer, and that of the (116)-oriented film included the lattice strain contrast due to an irregular atomic arrangement. The electrical property of the SBT film shows anisotropy of the ferroelectricity along the c- and a-axis directions; the remanent polarizations of the (001)- and (116)-oriented SBT films were 0 and 10.5 mu C/cm(2), respectively. (C) 2000 American Institute of Physics. [S0021-8979(00)02111-3].

引用

页码：8018 / 8023

页数：6

共 20 条

[11] Nagahama T., 1999, Key Engineering Materials, V169-170, P139
[12] Effect of deposition temperature and composition on the microstructure and electrical property of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition
Nukaga, N
Ishikawa, K
Funakubo, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (9B): : 5428 - 5431
[13] Nukaga N., 1999, Key Engineering Materials, V169-170, P145
[14] Low-temperature deposition of SrRuO3 thin film prepared by metalorganic chemical vapor deposition
Okuda, N
Saito, K
Funakubo, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (2A): : 572 - 576
[15] Okuda N., 1999, T MAT RES SOC JPN, V24, P51
[16] Crystal structures and ferroelectric properties of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9
Shimakawa, Y
Kubo, Y
Nakagawa, Y
Kamiyama, T
Asano, H
Izumi, F
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1904 - 1906
[17] Preparation of layered ferroelectric Bi2SrTa2O9 single-crystal platelets
Suzuki, M
Nagasawa, N
Machida, A
Ami, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (5A): : L564 - L567
[18] Interface and domain structures of (116)-oriented SrBi2Ta2O9 thin film epitaxially grown on (110) SrTiO3 single crystal
Suzuki, T
Nishi, Y
Fujimoto, M
Ishikawa, K
Funakubo, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11A): : L1265 - L1267
[19] Interface and defect structures of (001)-oriented SrBi2Ta2O9 thin film epitaxially grown on (001) SrTiO3 single crystal
Suzuki, T
Nishi, Y
Fujimoto, M
Ishikawa, K
Funakubo, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11A): : L1261 - L1264
[20] FORMATION OF BI-BASED LAYERED PEROVSKITE OXIDE-FILMS BY A LASER-ABLATION TECHNIQUE
TABATA, H
TANAKA, H
KAWAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B): : 5146 - 5149

← 1 2 →