Direct nanomolding of semiconductor single crystals

被引：8

作者：

Masuda, H

Yasui, K

Yanagishita, T

Nakao, M

Tamamura, T

Nishio, K

机构：

[1] Tokyo Metropolitan Univ, Sch Engn, Dept Appl Chem, Hachioji, Tokyo 1920397, Japan

[2] Nippon Telegraph & Tel Corp, Photon Lab, Atsugi, Kanagawa 2430198, Japan

[3] Nippon Telegraph & Tel Corp, Basic Res Lab, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 3AB期

关键词：

molding; InP single crystal; SIC; chemical etching;

D O I：

10.1143/JJAP.39.L256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ordered array of concaves of nanometer-scale dimensions was fabricated by a direct molding process on an InP single crystal using a SiC master mold. The obtained array of concaves could be applied for the preparation of an ordered textured surface of InP by a post-etching treatment. The treatment in hydrofluoric acid (HF) solution generated a highly ordered and textured surface composed of uniform pyramidal or triangular pits. The mold could be used repeatedly, and this method enables simple maskless patterning of semiconductor single crystals.

引用

页码：L256 / L258

页数：3

共 11 条

[1] OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS [J].

AKITA, K ;

KUSUNOKI, T ;

KOMIYA, S ;

KOTANI, T .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) :783-787

[2] Imprint lithography with 25-nanometer resolution [J].

Chou, SY ;

Krauss, PR ;

Renstrom, PJ .

SCIENCE, 1996, 272 (5258) :85-87

[3] Mold-assisted nanolithography: A process for reliable pattern replication [J].

Haisma, J ;

Verheijen, M ;

vandenHeuvel, K ;

vandenBerg, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4124-4128

[4] InAs-Dot/GaAs structures site-controlled by in situ EB lithography and self-organizing MBE growth [J].

Kohmoto, S ;

Ishikawa, T ;

Asakawa, K .

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, :769-772

[5]

Marzolin C, 1998, ADV MATER, V10, P571, DOI 10.1002/(SICI)1521-4095(199805)10:8<571::AID-ADMA571>3.0.CO

[6]

2-P

[7] Highly ordered nanochannel-array architecture in anodic alumina [J].

Masuda, H ;

Yamada, H ;

Satoh, M ;

Asoh, H ;

Nakao, M ;

Tamamura, T .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2770-2772

[8]

MASUDA H, 1998, 59 AUT M JAP SOC APP

[9] Direct nano-printing on Al substrate using a SiC mold [J].

Pang, SW ;

Tamamura, T ;

Nakao, M ;

Ozawa, A ;

Masuda, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1145-1149

[10] NOVEL INGAAS/GAAS QUANTUM-DOT STRUCTURES FORMED IN TETRAHEDRAL-SHAPED RECESSES ON (111)B GAAS SUBSTRATE USING METALORGANIC VAPOR-PHASE EPITAXY [J].

SUGIYAMA, Y ;

SAKUMA, Y ;

MUTO, S ;

YOKOYAMA, N .

APPLIED PHYSICS LETTERS, 1995, 67 (02) :256-258

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