The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2

被引:518
作者
Buscema, Michele [1 ]
Steele, Gary A. [1 ]
van der Zant, Herre S. J. [1 ]
Castellanos-Gomez, Andres [1 ]
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
关键词
molybdenum disulfide; van der Waals heterostructures; Raman microscopy; photoluminescence enhancement; photoluminescence quenching; substrate effect; RELIABLE THICKNESS IDENTIFICATION; VALLEY POLARIZATION; MONOLAYER MOS2; GRAPHENE; ENERGY; GENERATION; TRIONS; MICA;
D O I
10.1007/s12274-014-0424-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We quantitatively study the Raman and photoluminescence (PL) emission from single-layer molybdenum disulfide (MoS2) on dielectric (SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film (R)) and conducting substrates (Au and few-layer graphene). We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the A(1g) Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoS2-based vertical heterostructures and represent the first step in ad hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.
引用
收藏
页码:561 / 571
页数:11
相关论文
共 52 条
[11]  
Castellanos-Gomez A., 2013, ARXIV13114829
[12]   Single-Layer MoS2 Mechanical Resonators [J].
Castellanos-Gomez, Andres ;
van Leeuwen, Ronald ;
Buscema, Michele ;
van der Zant, Herre S. J. ;
Steele, Gary A. ;
Venstra, Warner J. .
ADVANCED MATERIALS, 2013, 25 (46) :6719-6723
[13]   Elastic Properties of Freely Suspended MoS2 Nanosheets [J].
Castellanos-Gomez, Andres ;
Poot, Menno ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Agrait, Nicolas ;
Rubio-Bollinger, Gabino .
ADVANCED MATERIALS, 2012, 24 (06) :772-775
[14]   Atomically Thin Mica Flakes and Their Application as Ultrathin Insulating Substrates for Graphene [J].
Castellanos-Gomez, Andres ;
Wojtaszek, Magdalena ;
Tombros, Nikolaos ;
Agrait, Nicolas ;
van Wees, Bart J. ;
Rubio-Bollinger, Gabino .
SMALL, 2011, 7 (17) :2491-2497
[15]   Symmetry-dependent phonon renormalization in monolayer MoS2 transistor [J].
Chakraborty, Biswanath ;
Bera, Achintya ;
Muthu, D. V. S. ;
Bhowmick, Somnath ;
Waghmare, U. V. ;
Sood, A. K. .
PHYSICAL REVIEW B, 2012, 85 (16)
[16]   Energy Transfer from Individual Semiconductor Nanocrystals to Graphene [J].
Chen, Zheyuan ;
Berciaud, Stephane ;
Nuckolls, Colin ;
Heinz, Tony F. ;
Brus, Louis E. .
ACS NANO, 2010, 4 (05) :2964-2968
[17]   Nonlinear elastic behavior of two-dimensional molybdenum disulfide [J].
Cooper, Ryan C. ;
Lee, Changgu ;
Marianetti, Chris A. ;
Wei, Xiaoding ;
Hone, James ;
Kysar, Jeffrey W. .
PHYSICAL REVIEW B, 2013, 87 (03)
[18]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[19]   Raman spectrum of graphene and graphene layers [J].
Ferrari, A. C. ;
Meyer, J. C. ;
Scardaci, V. ;
Casiraghi, C. ;
Lazzeri, M. ;
Mauri, F. ;
Piscanec, S. ;
Jiang, D. ;
Novoselov, K. S. ;
Roth, S. ;
Geim, A. K. .
PHYSICAL REVIEW LETTERS, 2006, 97 (18)
[20]   Universal Distance-Scaling of Nonradiative Energy Transfer to Graphene [J].
Gaudreau, L. ;
Tielrooij, K. J. ;
Prawiroatmodjo, G. E. D. K. ;
Osmond, J. ;
Garcia de Abajo, F. J. ;
Koppens, F. H. L. .
NANO LETTERS, 2013, 13 (05) :2030-2035