Series resistance limits for 0.05μm MOSFETs

被引：18

作者：

Keys, P ^{[1
]}

Gossmann, HJ ^{[1
]}

Ng, KK ^{[1
]}

Rafferty, CS ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 27卷 / 2-3期

关键词：

transistor; diffusion; resistance; scaling;

D O I：

10.1006/spmi.1999.0809

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Technology scaling demands shallower junctions for MOSFETs, making high-conductivity access to the intrinsic device harder to achieve. Considerable effort has been devoted to improving process technology in order to reduce the sheet resistivity of shallow implanted layers. However, a calculation of the components of resistance las a function of technology node suggests that sheet resistance is unlikely to be a limiting factor in scaled MOSFETs. Contact and link-up resistance neighboring the channel will play an increasingly important part in driving junction technology. (C) 2000 Academic Press.

引用

页码：125 / 136

页数：12

共 12 条

[1] Ultra-shallow junctions by ion implantation and rapid thermal annealing: Spike-anneals, ramp rate effects [J].

Agarwal, A ;

Gossmann, HJ ;

Fiory, AT .

SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 :19-30

[2]

ANTONIADIS DA, WELL TAMPERED BULK S

[3] SPREADING RESISTANCE IN SUB-MICRON MOSFETS [J].

BACCARANI, G ;

SAIHALASZ, GA .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) :27-29

[4] Scattering theory of the short channel MOSFET [J].

Lundstrom, M .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :387-390

[5]

LUNDSTROMM, 1999, COMMUNICATION

[6] ANALYSIS OF THE GATE-VOLTAGE-DEPENDENT SERIES RESISTANCE OF MOSFETS [J].

NG, KK ;

LYNCH, WT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :965-972

[7]

Pinto M. R., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P923, DOI 10.1109/IEDM.1992.307507

[8] Ultra shallow junction formation by RTA at high temperature for short heating cycle time [J].

Saito, S ;

Shishiguchi, S ;

Mineji, A ;

Matsuda, T .

SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING, 1998, 532 :3-11

[9]

Semiconductor Industry Association, 1999, INT TECHN ROADM SEM

[10] Getting to the bottom of deep submicron [J].

Sylvester, D ;

Keutzer, K .

1998 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN: DIGEST OF TECHNICAL PAPERS, 1998, :203-211

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