Design of 0.1-μm pocket n-MOSFETs for low-voltage applications

被引：4

作者：

Pang, YS ^{[1
]}

Brews, JR ^{[1
]}

机构：

[1] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 12期

关键词：

pocket MOSFETs; short-channel effects; two-dimensional device simulation;

D O I：

10.1016/S0038-1101(02)00226-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Channel length 0.1-mum pocket n-MOSFETs meeting the specifications of sensitivity of off-state current to channel length, off-state (leakage) current, on-state (drive) current and 1 V power-supply voltage are designed using a two-dimensional device simulator, Medici, in order to construct a viable design space locating the well-designed 0.1-mum pocket devices. The 0.1-mum pocket n-MOSFETs located within the viable design space are partitioned into two types of pocket devices on the basis of gate controllability of channel- and depletion-layer charges. The 0.1-mum pocket n-MOSFETs are compared with 0.1-mum conventional bulk n-MOSFETs selected to meet the same specifications and prove to be effective in reducing sensitivity to channel-length variations. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2315 / 2322

页数：8

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