Aggregation of monocrystalline beta-FeSi2 by annealing and by Si overlayer growth

被引：53

作者：

Suemasu, T ^{[1
]}

Tanaka, M ^{[1
]}

Fujii, T ^{[1
]}

Hashimoto, S ^{[1
]}

Kumagai, Y ^{[1
]}

Hasegawa, F ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS TSUKUBA R&D CTR LTD, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期

关键词：

beta-FeSi2; aggregation; reactive deposition epitaxy; Si-MBE; XTEM;

D O I：

10.1143/JJAP.36.L1225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-FeSi2 films grown on Si(001) by the reactive deposition epitaxy (RDE) aggregated into islands after annealing at 850 degrees C for one hour in ultrahigh vacuum (UHV). When a 100-nm-thick Si overlayer was grown epitaxially at 750 degrees C by molecular beam epitaxy (MBE), the beta-FeSi2 islands aggregated further into a spherical shape in Si crystals. Observation with cross-sectional transmission electron microscope (XTEM) revealed that the epitaxial relationship between the two materials and monocrystalline nature were preserved even after the annealing and the Si overgrowth.

引用

页码：L1225 / L1228

页数：4

共 27 条

[1] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].

APETZ, R ;

VESCAN, L ;

HARTMANN, A ;

DIEKER, C ;

LUTH, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447

[2] A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE [J].

BOST, MC ;

MAHAN, JE .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :2034-2037

[3] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS [J].

BOST, MC ;

MAHAN, JE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2696-2703

[4] INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON [J].

CHENG, HC ;

YEW, TR ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5246-5250

[5] SEMICONDUCTING SILICIDE-SILICON HETEROJUNCTION ELABORATION BY SOLID-PHASE EPITAXY [J].

CHERIEF, N ;

DANTERROCHES, C ;

CINTI, RC ;

TAN, TAN ;

DERRIEN, J .

APPLIED PHYSICS LETTERS, 1989, 55 (16) :1671-1673

[6] ELECTRONIC-STRUCTURE OF BETA-FESI2 [J].

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1990, 42 (11) :7148-7153

[7] ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS [J].

DIMITRIADIS, CA ;

WERNER, JH ;

LOGOTHETIDIS, S ;

STUTZMANN, M ;

WEBER, J ;

NESPER, R .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1726-1734

[8] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[9] CHEMICAL BONDING AT THE SI-METAL INTERFACE - SI-NI AND SI-CR [J].

FRANCIOSI, A ;

WEAVER, JH ;

ONEILL, DG ;

CHABAL, Y ;

ROWE, JE ;

POATE, JM ;

BISI, O ;

CALANDRA, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :624-627

[10] Effect of multiple-step annealing on the formation of semiconducting beta-FeSi2 and metallic alpha-Fe2Si5 on Si(100) by ion beam synthesis [J].

Katsumata, H ;

Makita, Y ;

Kobayashi, N ;

Shibata, H ;

Hasegawa, M ;

Uekusa, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2802-2812

← 1 2 3 →