Size control of InAs/InP(001) quantum wires by tailoring P/As exchange

被引：40

作者：

Fuster, D

González, MU

González, L

González, Y

Ben, T

Ponce, A

Molina, SI

Martínez-Pastor, J

机构：

[1] CSIC, CNM, Inst Microelect Madrid, Madrid 28760, Spain

[2] Univ Cadiz, Dept Ciencia Mat IM & QI, Cadiz 11510, Spain

[3] Univ Valencia, Inst Ciencias Mat, Valencia 46071, Spain

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.1787155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The size and emission wavelength of self-assembled InAs/InP(001) quantum wires (QWrs) is affected by the P/As exchange process. In this work, we demonstrate by in situ stress measurements that P/As exchange at the InAs/InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P/As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 mum at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown. (C) 2004 American Institute of Physics.

引用

页码：1424 / 1426

页数：3

共 17 条

[11] Static and growing InP and InAs surfaces: reflection-anisotropy spectroscopy under the conditions of solid-source MBE [J].