Epitaxial growth of 1.55 μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications

被引：65

作者：

Schwertberger, R ^{[1
]}

Gold, D ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Tech Phys, D-97074 Wurzburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

low dimensional structures; gas source molecular beam epitaxy; self-organized growth; quantum dashes; semiconducting III-V materials; laser diodes;

D O I：

10.1016/S0022-0248(02)02371-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembled InAs quantum dashes in the InP system were grown by gas source molecular beam epitaxy. Different growth parameters like buffer material, growth temperature and layer thickness were studied using scanning electron microscopy and photoluminescence measurements. Four layers of InAs dashes were embedded as active material in a SCH laser structure. Device data of broad area and ridge waveguide lasers are presented. Broad area lasers of 100 mum width showed a transparency threshold current density of 330 A/cm(2) and an internal efficiency of 62%. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：248 / 252

页数：5

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