Fabrication of epitaxial diamond thin film on iridium

被引：61

作者：

Oiitsuka, K ^{[1
]}

Fukuda, H ^{[1
]}

Suzuki, K ^{[1
]}

Sawabe, A ^{[1
]}

机构：

[1] TO PLAS CORP, CHICHIBU, SAITAMA 318, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期

关键词：

diamond; diamond thin film; epitaxy; epitaxial growth; iridium; direct current; chemical vapor deposition; Raman spectroscopy;

D O I：

10.1143/JJAP.36.L1214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully grown smooth diamond thin films epitaxially on (001) iridium surfaces through a direct-current plasma chemical vapor deposition process with two steps: ion irradiation pretreatment and diamond growth, The epitaxial areas of diamond thin film with a mean thickness of about, 1.5 mu m seem to acl as optical mirrors. The average roughness (Ra) of the thin film, as measured by atomic force microscopy, is about 1 nm. Confocal Raman spectroscopy mas used to investigate the depth profile cli the thin film. Raman bands due to nondiamond carbon components mere nominal at the diamond/iridium interface or at other depths.

引用

页码：L1214 / L1216

页数：3

共 13 条

[1] HETEROEPITAXIAL GROWTH OF SMOOTH AND CONTINUOUS DIAMOND THIN FILMS ON SILICON SUBSTRATES VIA HIGH-QUALITY SILICON-CARBIDE BUFFER LAYERS [J].