Hydrazine-based deposition route for device-quality CIGS films

被引：128

作者：

Mitzi, David B. ^{[1
]}

Yuan, Min ^{[1
]}

Liu, Wei ^{[1
]}

Kellock, Andrew J. ^{[2
]}

Chey, S. Jay ^{[1
]}

Gignac, Lynne ^{[1
]}

Schrott, Alex G. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Almaden Res Ctr, San Jose, CA 95120 USA

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

CIGS; Solar cells; Non-vacuum; Spin coating; Thin-film; Photovoltaics; SOLAR-CELLS; CU(IN; GA)SE-2; PRECURSORS;

D O I：

10.1016/j.tsf.2008.10.079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 degrees C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need fora post-CIGS-deposition treatment in a gaseous Se source ora cyanide-based bath etch. Short-duration low-temperature (T<200 degrees C) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2158 / 2162

页数：5

共 27 条

[11] Electrosprayed and selenized Cu/In metal particle films [J].