Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror

被引：52

作者：

Ishii, M

Iwai, S

Kawata, H

Ueki, T

Aoyagi, Y

机构：

[1] INST PHYS & CHEM RES,SEMICOND LAB,WAKO,SAITAMA 35101,JAPAN

[2] NIPPON PILLAR PACKING CO LTD,SANDA,HYOGO 69913,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 180卷 / 01期

关键词：

ALE; AlP; GaP; surface smoothing; X-ray multilayer mirror;

D O I：

10.1016/S0022-0248(97)00198-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic layer epitaxy (ALE) of aluminum phosphide (AlP) is successfully achieved for the first time. Gallium phosphide (GaP) ALE is also discussed, and it is found that ALE smoothens the surface roughness of the substrate. AlP and GaP ALE are primarily used for fabrication of X-ray multilayer mirror. According to the layer-by-layer growth nature of ALE, the reflection wavelength of multilayer mirrors is proved to be exactly controlled by ALE cycle number. An AlP/GaP multilayer mirror with a reflectivity in excess of 10% is realized by ALE at the wavelength of the L absorption edge of Al in AlP.

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收藏

页码：15 / 21

页数：7

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