Reduced turn-on delay time in 1.3-mu m InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers with a buried heterostructure

被引：4

作者：

Nakahara, K

Uomi, K

Haga, T

Taniwatari, T

Oishi, A

机构：

[1] Central Research Laboratory, Fiberoptics Division, Hitachi, Ltd., Kokubunji-shi, Tokyo 185, 1-280, Higashi-koigakubo

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 10期

关键词：

D O I：

10.1109/68.536633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A reduction in both the threshold current and carrier lifetime is demonstrated, for the first time, in an n-type modulation-doped InGaAsP strained multiquantum well laser with a buried heterostructure. Threshold current and carrier lifetime is reduced by 10% and 15%, respectively, as compared with a undoped MQW laser, which results in a 35% decrease in the turn-on delay time, This confirms the suitability of this type of laser for use as a light source for high-density parallel optical interconnection.

引用

页码：1297 / 1298

页数：2

共 9 条

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