High-quality SiO2 film formation by highly concentrated ozone gas at below 600°C

被引：41

作者：

Nishiguchi, T

Nonaka, H

Ichimura, S

Morikawa, Y

Kekura, M

Miyamoto, M

机构：

[1] Meidensha Corp, Mat & Device Dept, Cent Res Lab, Shizuoka 4108588, Japan

[2] Natl Inst Adv Ind Sci & Technol, Ultrafine Profiling Technol Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 12期

关键词：

D O I：

10.1063/1.1507829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly concentrated (>93 vol %) ozone (O-3) gas was used to oxidize silicon for obtaining high-quality SiO2 film at low temperature. Compared to O-2 oxidation, more than 500 degreesC lower temperature oxidation (i.e., from 830 to 330 degreesC) has been enabled for achieving the same SiO2 growth rate. A 6 nm SiO2 film, for example, could be grown at 600 degreesC within 3 min at 900 Pa O-3 atmosphere. The temperature dependence of the oxidation rate is relatively low, giving an activation energy for the parabolic rate constant of 0.32 eV. Furthermore, a 400 degreesC grown SiO2 film was found to have satisfactory electrical properties with a small interface trap density (5x10(10) cm(-2)/eV) and large breakdown field (14 MV/cm). (C) 2002 American Institute of Physics.

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页码：2190 / 2192

页数：3

相关论文

共 21 条

[1] Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures [J].

Chanana, RK ;

McDonald, K ;

Di Ventra, M ;

Pantelides, ST ;

Feldman, LC ;

Chung, GY ;

Tin, CC ;

Williams, JR ;

Weller, RA .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2560-2562

[2] Rapid thermal oxidation of silicon in ozone [J].

Cui, ZJ ;

Madsen, JM ;

Takoudis, CG .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :8181-8186

[3] CHARACTERIZATION OF THIN SIO2 GROWN BY RAPID THERMAL-PROCESSING AS INFLUENCED BY PROCESSING PARAMETERS [J].

EFTEKHARI, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) :787-789

[4] Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygen [J].

Fuyuki, T ;

Muranaka, S ;

Matsunami, H .

APPLIED SURFACE SCIENCE, 1997, 117 :123-126

[5] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[6] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1708-1714

[7] LOW-TEMPERATURE OXIDATION OF SILICON IN DRY O2 AMBIENT BY UV-IRRADIATION [J].

ISHIKAWA, Y ;

SHIBAMOTO, T ;

NAKAMICHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (04) :1148-1152

[8] UV ASSISTED GROWTH OF 100A THICK SIO2 AT 550-DEGREES-C [J].

KAZOR, A ;

BOYD, IW .

ELECTRONICS LETTERS, 1991, 27 (11) :909-911

[9] OZONE-INDUCED RAPID LOW-TEMPERATURE OXIDATION OF SILICON [J].

KAZOR, A ;

BOYD, IW .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2517-2519

[10] X-ray photoelectron spectroscopy (XPS) analysis of oxide formation on silicon with high-purity ozone [J].

Kurokawa, A ;

Ichimura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (12A) :L1606-L1608