Localization effects in InGaAsN multi-quantum well structures

被引：10

作者：

Hoffmann, A

Heitz, R

Kaschner, A

Lüttgert, T

Born, H

Egorov, AY

Riechert, H

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Infineon Technol, Corp Res, D-81730 Munich, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 93卷 / 1-3期

关键词：

InGaAsN; photoluminescence; exciton dynamics;

D O I：

10.1016/S0921-5107(02)00044-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the exciton dynamics. The results are supported by temperature-dependent photoluminescence and photoluminescence excitation investigations. In the last part, the state of the art of the 1.3 mum laser development is overviewed. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：55 / 59

页数：5

相关论文

共 15 条

[1] Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice [J].

Bergman, L ;

Dutta, M ;

Stroscio, MA ;

Komirenko, SM ;

Nemanich, RJ ;

Eiting, CJ ;

Lambert, DJH ;

Kwon, HK ;

Dupuis, RD .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :1969-1971

[2] Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm [J].

Choquette, KD ;

Klem, JF ;

Fischer, AJ ;

Blum, O ;

Allerman, AA ;

Fritz, IJ ;

Kurtz, SR ;

Breiland, WG ;

Sieg, R ;

Geib, KM ;

Scott, JW ;

Naone, RL .

ELECTRONICS LETTERS, 2000, 36 (16) :1388-1390

[3] High power CW operation of InGaAsN lasers at 1.3μm [J].

Egorov, AY ;

Bernklau, D ;

Livshits, D ;

Ustinov, V ;

Alferov, ZI ;

Riechert, H .

ELECTRONICS LETTERS, 1999, 35 (19) :1643-1644

[4] ''Blue'' temperature-induced shift and band-tail emission in InGaN-based light sources [J].

Eliseev, PG ;

Perlin, P ;

Lee, JY ;

Osinski, M .

APPLIED PHYSICS LETTERS, 1997, 71 (05) :569-571

[5] EXCITON TRANSFER BETWEEN LOCALIZED STATES IN CDS1-XSEX ALLOYS [J].

GOURDON, C ;

LAVALLARD, P .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1989, 153 (02) :641-652

[6]

GRILLO V, 2002, IN PRESS PHYS STATUS

[7] Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content [J].

Hetterich, M ;

Dawson, MD ;

Egorov, AY ;

Bernklau, D ;

Riechert, H .

APPLIED PHYSICS LETTERS, 2000, 76 (08) :1030-1032

[8] Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].

Höhnsdorf, F ;

Koch, J ;

Leu, S ;

Stolz, W ;

Borchert, B ;

Druminski, M .

ELECTRONICS LETTERS, 1999, 35 (07) :571-572

[9] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[10]

MAIR RA, 2000, APPL PHYS LETT, V76, P2241