Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes

被引：27

作者：

Cheng, CC

Tsai, YY

Lin, KW

Chen, HI

Hsu, WH

Chuang, HM

Chen, CY

Liu, WC

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engineer, Tainan 70101, Taiwan

[3] Chien Kuo Inst Technol, Dept Elect Engn, Changhua, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 06期

关键词：

D O I：

10.1088/0268-1242/19/6/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole(-1), respectively.

引用

收藏

页码：778 / 782

页数：5

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