Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation

被引：17

作者：

Grundmann, M ^{[1
]}

Heinrichsdorff, F ^{[1
]}

Ribbat, C ^{[1
]}

Mao, MH ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 1999年 / 69卷 / 5-6期

关键词：

D O I：

10.1007/s003400050828

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The field of semiconductor quantum dot (QD) diode lasers is rapidly developing. Important milestones, such as low-threshold operation and room-temperature cw operation, have been achieved in the last years. We review the progress in theoretical understanding and present recent results on high-power QD laser operation (> 3 W@1100 nm).

引用

页码：413 / 416

页数：4

共 36 条

[21]

LIU GT, 1999, 99TH8455 IEEE, P19

[22] Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 degrees C [J].

Maksimov, MV ;

Gordeev, NY ;

Zaitsev, SV ;

Kopev, PS ;

Kochnev, IV ;

Ledentsov, NN ;

Lunev, AV ;

Ruvimov, SS ;

Sakharov, AV ;

Tsatsulnikov, AF ;

Shernyakov, YM ;

Alferov, ZI ;

Bimberg, D .

SEMICONDUCTORS, 1997, 31 (02) :124-126

[23] High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser [J].

Maximov, MV ;

Shernyakov, YM ;

Tsatsul'nikov, AF ;

Lunev, AV ;

Sakharov, AV ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kovsh, AR ;

Kop'ev, PS ;

Asryan, LV ;

Alferov, ZI ;

Ledentsov, NN ;

Bimberg, D ;

Kosogov, AO ;

Werner, P .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5561-5563

[24] Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers [J].

Park, G ;

Huffaker, DL ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (03) :301-303

[25] TEM/HREM VISUALIZATION OF NM-SCALE COHERENT INAS ISLANDS (QUANTUM DOTS) IN A GAAS MATRIX [J].

RUVIMOV, S ;

SCHEERSCHMIDT, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 150 (01) :471-478

[26] STRUCTURAL CHARACTERIZATION OF (IN,GA)AS QUANTUM DOTS IN A GAAS MATRIX [J].

RUVIMOV, S ;

WERNER, P ;

SCHEERSCHMIDT, K ;

GOSELE, U ;

HEYDENREICH, J ;

RICHTER, U ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

EGOROV, AY ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW B, 1995, 51 (20) :14766-14769

[27] High-performance GaInAs GaAs quantum-dot lasers based on a single active layer [J].

Schäfer, F ;

Reithmaier, JP ;

Forchel, A .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :2915-2917

[28] Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W [J].

Shernyakov, YM ;

Egorov, AY ;

Zhukov, AE ;

Zaitsev, SV ;

Kovsh, AR ;

Krestnikov, IL ;

Lunev, AV ;

Ledentsov, NN ;

Maksimov, MV ;

Sakharov, AV ;

Ustinov, VM ;

Chen, C ;

Kopev, PS ;

Alferov, ZI ;

Bimberg, D .

TECHNICAL PHYSICS LETTERS, 1997, 23 (02) :149-150

[29] Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region [J].

Shernyakov, YM ;

Egorov, AY ;

Volovik, BV ;

Zhukov, AE ;

Kovsh, AR ;

Lunev, AV ;

Ledentsov, NN ;

Maksimov, MV ;

Sakharov, AV ;

Ustinov, VM ;

Zhao, Z ;

Kop'ev, PS ;

Alferov, ZI ;

Bimberg, D .

TECHNICAL PHYSICS LETTERS, 1998, 24 (05) :351-353

[30] 1.3μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition [J].

Shernyakov, YM ;

Bedarev, DA ;

Kondrat'eva, EY ;

Kop'ev, PS ;

Kovsh, AR ;

Maleev, NA ;

Maximov, MV ;

Mikhrin, SS ;

Tsatsul'nikov, AF ;

Ustinov, VM ;

Volovik, BV ;

Zhukov, AE ;

Alferov, ZI ;

Ledentsov, NN ;

Bimberg, D .

ELECTRONICS LETTERS, 1999, 35 (11) :898-900

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