Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN

被引：72

作者：

Watanabe, K ^{[1
]}

Yang, JR

Huang, SY

Inoke, K

Hsu, JT

Tu, RC

Yamazaki, T

Nakanishi, N

Shiojiri, M

机构：

[1] Tokyo Metropolitan Coll Technol, Tokyo 1400011, Japan

[2] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan

[3] FEI Co Japan, Tokyo 1088509, Japan

[4] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan

[5] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan

[6] Kanazawa Med Univ, Dept Anat, Kanazawa, Ishikawa 9200293, Japan

[7] Kyoto Inst Technol, Kyoto 6068585, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.1542683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have determined the structure of inverted hexagonal pyramid defects (IHPs) in multiple quantum wells InGaN/GaN by high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM). HAADF STEM images reveal definitely that the IHP nucleates at a threading dislocation and grows in the form of a thin six-walled structure with InGaN/GaN {10 (1) over bar1} layers. It has been found that IHPs start even at In-rich dots under adverse growth conditions. (C) 2003 American Institute of Physics.

引用

页码：718 / 720

页数：3

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