Effect of pyrolysis temperature on preferential orientation and electrical properties of sol-gel derived lead zirconate titanate films

被引:59
作者
Gong, W [1 ]
Li, JF [1 ]
Chu, XC [1 ]
Li, LT [1 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
dielectric properties; fatigue; ferroelectric properties; films; PZT;
D O I
10.1016/j.jeurceramsoc.2003.10.007
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Lead zirconate titanate (PZT) films with composition near the morphotropic phase boundary were fabricated on Pt(1 11)/Ti/SiO2/Si(100) using sol-gel method, and the pyrolysis temperature effects on the preferential orientation and ferroelectric properties of PZT films were investigated. It has been found that the PZT films pyrolyzed at 450 degreesC and then annealed at 650 degreesC shown a dominated (100) orientation, whereas the pyrolysis treatment at lower or higher temperatures favored the (111) orientation. Different pyrolysis temperatures also lead to differences in electrical properties, including dielectric constant, polarization values, leakage current and fatigue behavior. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2977 / 2982
页数:6
相关论文
共 23 条
[1]   Preparation of PZT, PLZT and Bi4Ti3O12 thin films from oxide precursors [J].
Araújo, EB ;
Eiras, JA .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) :1453-1456
[2]   Texture evolution and electrical properties of oriented PZT thin films [J].
Chen, SY .
MATERIALS CHEMISTRY AND PHYSICS, 1996, 45 (02) :159-162
[3]   Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film [J].
Cho, CR ;
Lee, WJ ;
Yu, BG ;
Kim, BW .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2700-2711
[4]   Deposition of PZT thin film and determination of their optical properties [J].
Czekaj, D ;
Gomes, MJM ;
Vasilevskiy, M ;
Pereira, M ;
Dos Santos, MP .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) :1489-1492
[5]  
Fu XR, 2001, FERROELECTRICS, V260, P519
[6]  
Fujii T, 2002, FERROELECTRICS, V270, P1189
[7]   Structural development in the early stages of annealing of sol-gel prepared lead zirconate titanate thin films [J].
Huang, Z ;
Zhang, Q ;
Whatmore, RW .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1662-1669
[8]   Compositional design of Pb(Zr, Ti)O3 for highly reliable ferroelectric memories [J].
Inoue, N ;
Takeuchi, T ;
Hayashi, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) :1572-1579
[9]   PZT thin film bi-layer devices for phase controlled actuation in MEMS [J].
Jenkins, DFL ;
Clegg, WW ;
Cattan, E ;
Remiens, D .
JOURNAL OF ELECTROCERAMICS, 2001, 7 (01) :5-11
[10]   Highly oriented lead zirconium titanate thin films: Growth, control of texture, and its effect on dielectric properties [J].
Kalpat, S ;
Uchino, K .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2703-2710