Photocatalytic activity of gallium nitride for producing hydrogen from water under light irradiation

被引：55

作者：

Kida, T.

Minami, Y.

Guan, G.

Nagano, M.

Akiyama, M.

Yoshida, A.

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Chem & Appl Chem, Saga 8408502, Japan

[2] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Dept Mol & Mat Sci, Kasuga, Fukuoka 8168580, Japan

[3] Inst Microtech Mainz GmbH, Fuel Proc & Heterogeneous Chem Proc Technol Dept, D-55129 Mainz, Germany

[4] Saga Univ, Fac Sci & Engn, Dept Chem & Appl Chem, Saga 8408502, Japan

[5] AIST, On Site Sensing & Diag Res Lab, Tosu, Saga 8410052, Japan

[6] Kitakyushu Natl Coll Technol, Dept Mat Sci & Chem Engn, Kokuraminami Ku, Fukuoka 8020985, Japan

来源：

JOURNAL OF MATERIALS SCIENCE | 2006年 / 41卷 / 11期

关键词：

D O I：

10.1007/s10853-005-5655-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photocatalytic activity of powdered GaN for decomposing water into hydrogen under light irradiation was investigated. It was found that GaN has activity for producing hydrogen from water containing electron donors (Na2S-Na2SO3, CH3OH) without a loading of a noble metal; the obtained H-2 yield was ca. 150 mu mol for a 200 h-Xe lamp (300 W) irradiation. The activity was increased by adding NaOH in the reaction solution due to the photo-etching of GaN by NaOH and concomitant removal of the native oxide from the surface, as confirmed by XPS, XRD, and PL measurements. The band energy scheme for GaN suggests that the conduction band edge of GaN is positioned at 0.5 V higher than the redox potential of H+/H-2. This large energy difference (overpotential) makes the photocatalytic H-2 evolution over GaN from water possible.

引用

页码：3527 / 3534

页数：8

共 32 条

[21] Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy [J].