GaNAsSb: how does it compare with other dilute III-V-nitride alloys?

被引：95

作者：

Harmand, JC

Caliman, A

Rao, EVK

Largeau, L

Ramos, J

Teissier, R

Traverse, L

Ungaro, G

Theys, B

Dias, IFL

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] CNRS, LPSC, F-92195 Meudon, France

[3] Univ Estadual Londrina, Dept Fis, BR-86051970 Londrina, Parana, Brazil

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 08期

关键词：

D O I：

10.1088/0268-1242/17/8/306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III-N-V alloys. Similar properties are observed including very high bandgap bowing, carrier localization at low temperature, sensitivity to thermal annealing and passivation of N-related electronic states by hydrogen. On the other hand, we point out some features of this alloy system and evaluate its potential for device applications. Probably, GaNAsSb can achieve emission at longer wavelengths than GaInNAs alloys grown to date. Its conduction- and valence-band offsets can be independently tuned by adjusting the N and Sb composition, respectively. Since this compound has a single group III element, its electronic structure should be less dependent on alloy configuration than GaInNAs.

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页码：778 / 784

页数：7

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