Carbon bonding site in Si(001)c(4x4) prepared by hydrocarbon decomposition -: art. no. 233306

被引：15

作者：

Ahn, JR

Lee, HS

Kim, YK

Yeom, HW ^{[1
]}

机构：

[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120749, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.69.233306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have reexamined the structural models of Si(001)c(4x4) induced by carbon, which is important for the initial C incorporation, using high-resolution photoemission. Through a proper thermal treatment after the thermal decomposition of the typical carrier gas molecules of C2H2 and C2H4, a well-ordered c(4x4) surface was reproducibly prepared, which exhibits only a single well defined C 1s component with a binding energy of 282.8 eV. This indicates that the c(4x4) surface is made of a unique C bonding configuration in contrast to some structure models. From the angular variation of the C 1s photoemission intensity, we confirm that the unique C bonding site corresponds to the incorporation into the subsurface layers rather than a metastable surface adsorption.

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页码：233306 / 1

页数：4

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