Steric and electronic effects in the molecular quenching of porous silicon luminescence

In this review, the effects of molecular exposure on the luminescent centers in porous silicon (PS) are described. The primary focus here is an attempt to understand how a variation in the size and electronic properties of a molecular absorbate can affect the quenching of porous Si light emission from different substrates. Results from our laboratories employing Lewis bases such as amines as quenchers of F'S luminescence are stressed, as well as an overview of other relevant approaches using organic solvents, aromatic hydrocarbons, Bronsted acids/bases, and transition metal ions is presented.