THE IMPACT OF SONICATION ON THE STRUCTURE AND PROPERTIES OF STAIN-ETCH POROUS SILICON

被引：16

作者：

CHANDLERHENDERSON, RR ^{[1
]}

COFFER, JL ^{[1
]}

FILESSESLER, LA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 12期

关键词：

D O I：

10.1149/1.2059381

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The influence of sonication on the surface structure and chemical stability of porous silicon (PS) thin films prepared by an open-circuit stain-etch is described. An analysis of differences in surface morphologies by atomic force microscopy between samples prepared either in the presence or absence of sonication reveals that sonication generates a relatively rougher, thicker film as evidenced by the magnitudes of average and root-mean square surface roughness (R(a))and the maximum height of surface features. These differences result in stain-etch porous Si films possessing greater chemical stability to exposure to reagents such as water and organoamines.

引用

页码：L166 / L168

页数：3

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