LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

被引：690

作者：

Crawford, Mary H. ^{[1
]}

机构：

[1] Sandia Natl Labs, Dept Semicond Mat & Device Sci, Albuquerque, NM 87185 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 04期

关键词：

Energy conservation; LEDs; lighting; semiconductor devices; A-PLANE GAN; HIGH-EXTRACTION-EFFICIENCY; EMITTING-DIODES; HIGH-POWER; SPONTANEOUS EMISSION; CRYSTALLINE-QUALITY; QUANTUM EFFICIENCY; SAPPHIRE SUBSTRATE; DEFECT DENSITY; MOVPE GROWTH;

D O I：

10.1109/JSTQE.2009.2013476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Over the past decade, advances in LEDs have enabled the potential forwide-scale replacement of traditional lighting with solid-state light sources. If LED performance targets are realized, solid-state lighting will provide significant energy savings, important environmental benefits, and dramatically new ways to utilize and control light. In this paper, we review LED performance targets that are needed to achieve these benefits and highlight some of the remaining technical challenges. We describe recent advances in LED materials and novel device concepts that show promise for realizing the full potential of LED-based white lighting.

引用

页码：1028 / 1040

页数：13

共 96 条

[71] In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells [J].

Scholz, F ;

Sohmer, A ;

Off, J ;

Syganow, V ;

Dornen, A ;

Im, JS ;

Hangleiter, A ;

Lakner, H .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3) :238-244

[72]

Schubert M.F., 2008, APPL PHYS LETT, V93

[73] Metal-enhanced superoxide generation: A consequence of plasmon-enhanced triplet yields [J].

Zhang, Yongxia ;

Aslan, Kadir ;

Previte, Michael J. R. ;

Geddes, Chris D. .

APPLIED PHYSICS LETTERS, 2007, 91 (02)

[74] Solitary waves for nonconvex FPU lattices [J].

Schwetlick, Hartmut ;

Zimmer, Johannes .

JOURNAL OF NONLINEAR SCIENCE, 2007, 17 (01) :1-12

[75] Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral Overgrowth [J].

Senda, Ryota ;

Miura, Aya ;

Hayakawa, Takemasa ;

Kawashima, Takeshi ;

Iida, Daisuke ;

Nagai, Tetsuya ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (36-40) :L948-L950

[76] High performance thin-film flip-chip InGaN-GaN light-emitting diodes [J].

Shchekin, O. B. ;

Epler, J. E. ;

Trottier, T. A. ;

Margalith, T. ;

Steigerwald, D. A. ;

Holcomb, M. O. ;

Martin, P. S. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

[77] Movpe growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer [J].

Shimizu, M ;

Kawaguchi, Y ;

Hiramatsu, K ;

Sawaki, N .

SOLID-STATE ELECTRONICS, 1997, 41 (02) :145-147

[78] Organic light-emitting devices for solid-state lighting [J].

So, Franky ;

Kido, Junji ;

Burrows, Paul .

MRS BULLETIN, 2008, 33 (07) :663-669

[79] Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes [J].

Sun, CJ ;

Anwar, MZ ;

Chen, Q ;

Yang, JW ;

Khan, MA ;

Shur, MS ;

Bykhovski, AD ;

LilientalWeber, Z ;

Kisielowski, C ;

Smith, M ;

Lin, JY ;

Xiang, HX .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :2978-2980

[80]

SUN G, 2007, APPL PHYS LETT, V90

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