Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral Overgrowth

被引：11

作者：

Senda, Ryota ^{[1
]}

Miura, Aya ^{[1
]}

Hayakawa, Takemasa ^{[1
]}

Kawashima, Takeshi ^{[1
]}

Iida, Daisuke ^{[1
]}

Nagai, Tetsuya ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Amano, Hiroshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 36-40期

关键词：

thick GaInN layer; epitaxial lateral growth; m-plane; PL; LED;

D O I：

10.1143/JJAP.46.L948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-crystalline-quality thick m-plane Ga0.92In0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (1010) in the 2 theta/omega-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm.

引用

页码：L948 / L950

页数：3

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