One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters

被引：39

作者：

Iida, D. ^{[1
]}

Miura, A. ^{[1
]}

Okadome, Y. ^{[1
]}

Tsuchiya, Y. ^{[1
]}

Kawashima, T. ^{[1
]}

Nagai, T. ^{[1
]}

Iwaya, M. ^{[1
]}

Kamiyama, S. ^{[1
]}

Amano, H. ^{[1
]}

Akasaki, I. ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Century COE Program Nano Factory 21, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 06期

关键词：

D O I：

10.1002/pssa.200674810

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a-plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10(6) cm(-2) and 10(3) cm(-1), respectively. We also fabricated and characterized a-plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density. (c) 2007 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim.

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页码：2005 / 2009

页数：5

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