Reduction in defect density over whole area of (1(1)over-bar00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth

被引：32

作者：

Kawashima, T.

Nagai, T.

Iida, D.

Miura, A.

Okadome, Y.

Tsuchiya, Y.

Iwaya, M.

Kamiyama, S.

Amano, H.

Akasaki, I.

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, COE Program Nanofactory 21, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 06期

关键词：

D O I：

10.1002/pssb.200674805

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We succeeded in growing low-defect-density m-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 x 10(7) (cm(-2)) and < 2.6 x 10(4) (cm(-1)), respectively. The photoluminescence intensity was 213 times higher than that of an m-plane GaN template on an m-plane 4H-SiC substrate. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：1848 / 1852

页数：5

相关论文

共 13 条

[1] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE [J].

AMANO, H ;

KITOH, M ;

HIRAMATSU, K ;

AKASAKI, I .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) :1639-1641

[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[4]

AMANO H, 1991, MAT RES SOC EXT ABST, V21, P165

[5] Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates [J].

Chakraborty, A ;

Haskell, BA ;

Keller, S ;

Speck, JS ;

Denbaars, SP ;

Nakamura, S ;

Mishra, UK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L173-L175

[6] Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire [J].

Chitnis, A ;

Chen, C ;

Adivarahan, V ;

Shatalov, M ;

Kuokstis, E ;

Mandavilli, V ;

Yang, J ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3663-3665

[7] Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition [J].

Craven, MD ;

Waltereit, P ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (3A) :L235-L238

[8] Pendeoepitaxy of gallium nitride thin films [J].

Linthicum, K ;

Gehrke, T ;

Thomson, D ;

Carlson, E ;

Rajagopal, P ;

Smith, T ;

Batchelor, D ;

Davis, R .

APPLIED PHYSICS LETTERS, 1999, 75 (02) :196-198

[9] Luminescence from stacking faults in gallium nitride [J].

Liu, R ;

Bell, A ;

Ponce, FA ;

Chen, CQ ;

Yang, JW ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :021908-1

[10] Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10(1)over-bar-2) sapphire substrates [J].

Ng, HM .

APPLIED PHYSICS LETTERS, 2002, 80 (23) :4369-4371