Changes in luminescence intensities and carrier dynamics induced by proton irradiation in InxGa1-xAs/GaAs quantum dots -: art. no. 235314

被引：29

作者：

Marcinkevicius, S

Siegert, J

Leon, R

Cechavicius, B

Magness, B

Taylor, W

Lobo, C

机构：

[1] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[4] Calif State Univ Los Angeles, Dept Phys & Astron, Los Angeles, CA 90032 USA

[5] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.66.235314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between InGaAs/GaAs quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot structures varying in dot surface density (4x10(8)-3x10(10) cm(-2)) and substrate orientation [(100) and (311)B]. Similar trends were observed for all quantum dot samples. A slight increase in photoluminescence emission intensity after low to intermediate proton doses is observed in InGaAs/GaAs (100) quantum dot structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

引用

页码：1 / 6

页数：6

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