Effect of oxygen plasma on the electrical characteristics of GaAs MESFETs

被引：3

作者：

Kumar, V ^{[1
]}

Baby, A ^{[1
]}

Dhanavantri, C ^{[1
]}

Singh, JK ^{[1
]}

Singh, BR ^{[1
]}

机构：

[1] Cent Elect Engn Res Inst, Optoelect Devices Grp, Pilani 333031, Rajasthan, India

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(99)00248-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma induced damage often degrades the electrical and optical performance of the compound semiconductor based microwave/photonics devices and circuits. We have investigated the effect of oxygen plasma on the performance degradation of GaAs MESFETs, as measured by changes in breakdown voltage, saturation current, channel resistance, drift mobility etc. The performance degradation of the device is attributed to reduction of carrier mobility in the material due to ion bombardment. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：447 / 450

页数：4

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