Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

被引：106

作者：

Reshchikov, MA

Shahedipour, F

Korotkov, RY

Wessels, BW ^{[1
]}

Ulmer, MP

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Ctr Mat Res, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[4] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.372348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found. (C) 2000 American Institute of Physics. [S0021-8979(00)03207-2].

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页码：3351 / 3354

页数：4

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