Multibit Storage of Organic Thin-Film Field-Effect Transistors

被引：177

作者：

Guo, Yunlong ^{[1
,2
]}

Di, Chong-an ^{[1
]}

Ye, Shanghui ^{[1
,2
]}

Sun, Xiangnan ^{[1
,2
]}

Zheng, Jian ^{[1
,2
]}

Wen, Yugeng ^{[1
,2
]}

Wu, Weiping ^{[1
,2
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 19期

基金：

中国国家自然科学基金;

关键词：

POLYMERIC GATE ELECTRET; MEMORY-ELEMENT; PERFORMANCE; BISTABILITY; SYSTEM;

D O I：

10.1002/adma.200802430

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic thin-film field-effect transistor (OTFT) multibit storage devices are fabricated based on pentacene or copper phthalocyaine (CuPc) with normal polymer modifying layers of polystyrene (PS) or polymethylmethacrylate (PMMA). The devices shows excellent multibit storage properties in a single OTFT using electric and light-assisted programs.

引用

收藏

页码：1954 / 1959

页数：6

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