Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface

被引：34

作者：

Su, ZP

Teo, KL

Yu, PY

Uchida, K

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV MAT SCI, BERKELEY, CA 94720 USA

[2] NIPPON SANSO TSUKUBA LAB, TSUKUBA, IBARAKI, JAPAN

[3] NATL UNIV SINGAPORE, DEPT ELECT ENGN, SINGAPORE 117548, SINGAPORE

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 99卷 / 12期

关键词：

semiconductors; optical properties; order-disorder effects; luminescence;

D O I：

10.1016/0038-1098(96)80025-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

F.A.J.M. Driessen [Appl. Phys. Lett. 67, 1995, 2813] recently reported emission from GaAs/(partially ordered) GaInP2 quantum wells grown on GaAs when the excitation photon energy was above the band gap of GaAs. We found that such upconverted emission could be excited from partially ordered GaInP2 grown on GaAs even when the photon energy was below the band gap of GaAs. Auger processes are found to be inadequate in explaining our results. Instead we propose a two-step two-photon excitation mechanism together with a model in which the GaAs and GaInP2 conduction bands are almost degenerate. Copyright (C) 1996 Elsevier Science Ltd

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页码：933 / 936

页数：4

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