Device parameter extraction in the linear region of MOSFET's

A self-consistent technique is proposed to extract device parameters from the I-V characteristics of MOSFET's in the linear region. The three parameters V-T, B-m (= beta(0)) and R-m are extracted from the implicitly weighed least square curve fitting of r(D) against 1/(V-G - V-T - alpha V-D). The series resistance R, the factor theta of the V-G dependent beta, and L-eff are then obtained by comparing the long and short channel devices. Reasonable values are obtained for five technologies, and general agreement with Taur's method is confirmed. Based on the finding, a quick parameter extraction method using only three {r(D), V-G} data sets is proposed.