Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum

被引：28

作者：

Rogozin, A ^{[1
]}

Shevchenko, N ^{[1
]}

Vinnichenko, M ^{[1
]}

Prokert, F ^{[1
]}

Cantelli, V ^{[1
]}

Kolitsch, A ^{[1
]}

Möller, W ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.1771456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium tin oxide films produced by reactive middle frequency magnetron sputtering were annealed in a vacuum. The electrical and optical properties of the film have been studied in situ along With direct characterization of the crystalline structure. Even in the amorphous state, the film resistivity significantly decreases with increasing temperature due to a free-electron density enhancement, likely by the generation of oxygen vacancies. A rapid crystallization within the temperature range of 250-280 degreesC leads to a further decrease of the resistivity due to Sri donor activation. The resistivity. and the optical properties depend nonlinearly on the crystalline fraction. (C) 2004 American Institute of Physics.

引用

页码：212 / 214

页数：3

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