Four-Terminal Magneto-Transport in Graphene p-n Junctions Created by Spatially Selective Doping

被引：262

作者：

Lohmann, Timm ^{[1
]}

von Klitzing, Klaus ^{[1
]}

Smet, Jurgen H. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

NANO LETTERS | 2009年 / 9卷 / 05期

关键词：

FIELD; MOLECULES; GAS;

D O I：

10.1021/nl900203n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper, we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating, The preparation technique has been developed from systematic studies about influences on the initial doping of freshly prepared graphene. We investigated the removal of adsorbates by vacuum treatment, annealing, and compensation doping using NH3. Hysteretic behavior is observed in the electric field effect due to dipolar adsorbates like water and NH3. Finally we demonstrate spatially selective doping of graphene using patterned PMMA. Four-terminal transport measurements of the p-n devices reveal edge channel mixing in the quantum hall regime, Quantized resistances of h/e(2), h/3e(2) and h/15e(2) can be observed as expected from theory.

引用

页码：1973 / 1979

页数：7

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