Trench homogeneity in plasma immersion ion implantation

被引:13
作者
Huber, P
Keller, G
Gerlach, JW
Mändl, S [1 ]
Assmann, W
Rauschenbach, B
机构
[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
[2] Univ Munich, D-8046 Garching, Germany
关键词
plasma immersion implantation; elastic recoil detection; trenches; simulation;
D O I
10.1016/S0168-583X(99)00825-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Neon was implanted into silicon pieces mounted onto aluminium trench structures using plasma immersion ion implantation (PIII). The spatially resolved depth profiles, obtained by elastic recoil detection analysis (ERDA), were compared with two-dimensional simulation results from particle-in-cell (PIC) calculations. Good qualitative agreement was obtained, however the absolute measured doses are too high. This can be explained by the interaction of secondary electrons with the plasma, increasing the ion density, and by density inhomogeneities within the plasma. Furthermore, the 2D simulation cannot adequately describe the 3D experiment as a significant flux of ions from the outside of the symmetry plane into it is observed in the experiment. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1085 / 1089
页数:5
相关论文
共 12 条
[1]   A 100 kV 10 a high-voltage pulse generator for plasma immersion ion implantation [J].
Brutscher, J .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (07) :2621-2625
[2]   PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].
CONRAD, JR ;
RADTKE, JL ;
DODD, RA ;
WORZALA, FJ ;
TRAN, NC .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4591-4596
[3]   Lateral implantation homogeneity of wedge-shaped samples treated by plasma immersion ion implantation [J].
Ensinger, W ;
Hochbauer, T ;
Rauschenbach, B .
SURFACE & COATINGS TECHNOLOGY, 1997, 94-5 (1-3) :352-355
[4]   Modelling on plasma immersion implantation of trenches [J].
Keller, G ;
Paulus, M ;
Mändl, S ;
Stritzker, B ;
Rauschenbach, B .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :64-68
[5]   Comparison of measured and calculated dose for plasma source ion implantation into 3-D objects [J].
Mandl, S ;
Barradas, NP ;
Brutscher, J ;
Gunzel, R ;
Moller, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :996-999
[6]   Sheath and presheath dynamics in plasma immersion ion implantation [J].
Mandl, S ;
Gunzel, R ;
Moller, W .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (09) :1109-1117
[7]   ENERGY-DEPENDENCE OF THE ION-INDUCED SPUTTERING YIELDS OF MONATOMIC SOLIDS [J].
MATSUNAMI, N ;
YAMAMURA, Y ;
ITIKAWA, Y ;
ITOH, N ;
KAZUMATA, Y ;
MIYAGAWA, S ;
MORITA, K ;
SHIMIZU, R ;
TAWARA, H .
ATOMIC DATA AND NUCLEAR DATA TABLES, 1984, 31 (01) :1-80
[8]   Two-dimensional simulation of plasma-based ion implantation [J].
Paulus, M ;
Stals, L ;
Rüde, U ;
Rauschenbach, B .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :761-766
[9]   Ion focusing by an expanding, two-dimensional plasma sheath [J].
Sheridan, TE .
APPLIED PHYSICS LETTERS, 1996, 68 (14) :1918-1920
[10]   ELECTRON-EMISSION FROM GLOW-DISCHARGE CATHODE MATERIALS DUE TO NEON AND ARGON ION-BOMBARDMENT [J].
SZAPIRO, B ;
ROCCA, JJ .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3713-3716