High breakdown M-I-M structures on bulk AlN

被引：17

作者：

Luo, B

Johnson, JW

Kryliouk, O

Ren, F

Pearton, SJ

Chu, SNG

Nikolaev, AE

Melnik, YV

Dmitriev, VA

Anderson, TJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Agere Syst, Murray Hill, NJ 07974 USA

[4] Ioffe Inst, St Petersburg 194021, Russia

[5] TDI Inc, Gaithersburg, MD 20877 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 04期

基金：

美国国家科学基金会;

关键词：

high breakdown rectifier; bulk AlN; M-I-M structure; HVPE growth;

D O I：

10.1016/S0038-1101(01)00299-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The breakdown characteristics of metal-AlN-metal structures are reported as a function of contact diameter. The bulk AlN was grown by a HVPE method, resulting in a resistivity of 4 x 10(8) Omegacm. Front-side contact diameters of 175-600 mum were fabricated, displaying breakdown voltages up to similar to6300 V at 25 degreesC. Breakdown appeared to initiate at internal surfaces related to grain boundaries or cracks in the material. The results indicate the great promise of the Al(Ga)N system for high power rectifiers. (C) 2002 Published by Elsevier Science Ltd.

引用

页码：573 / 576

页数：4

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